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CC1120 swrs112f ? june 2011 ? revised april 2014 CC1120 high-performance rf transceiver for narrowband systems 1 device overview ? power supply 1.1 features ? wide supply voltage range (2.0 v ? 3.6 v) 1 ? high-performance, single-chip transceiver ? low current consumption: ? adjacent channel selectivity: 64 db at ? rx: 2 ma in rx sniff mode 12.5 khz offset ? rx: 17 ma peak current in low-power ? blocking performance: 91 db at 10 mhz offset mode ? excellent receiver sensitivity: ? rx: 22 ma peak current in high- performance mode ? ? 123 dbm at 1.2 kbps ? tx: 45 ma at +14 dbm ? ? 110 dbm at 50 kbps ? power down: 0.12 a (0.5 a with ewor timer ? ? 127 dbm using built-in coding gain running) ? very low phase noise: ? 111 dbc/hz at ? programmable output power up to +16 dbm with 10 khz offset 0.4-db step size ? suitable for systems targeting etsi category 1 ? automatic output power ramping compliance in 169-mhz and 433-mhz bands ? configurable data rates: 0 to 200 kbps ? high spectral efficiency (9.6 kbps in 12.5-khz channel in compliance with fcc narrowbanding ? supported modulation formats: 2-fsk, mandate) 2-gfsk, 4-fsk, 4-gfsk, msk, ook ? separate 128-byte rx and tx fifos ? wavematch: advanced digital signal processing for improved sync detect performance ? support for seamless integration with the cc1190 device for increased range giving up to 3-db ? rohs-compliant 5x5mm qfn 32 package improvement in sensitivity and up to +27 dbm output power 1.2 applications ? narrowband ultra-low-power wireless systems ? ieee 802.15.4g systems with channel spacing down to ? home and building automation 12.5 khz ? wireless alarm and security systems ? 169-, 315-, 433-, 868-, 915-, 920-, 950-mhz ? industrial monitoring and control ism/srd band ? wireless healthcare applications ? wireless metering and wireless smart grid (amr ? wireless sensor networks and active rfid and ami) ? private mobile radio 1.3 description the CC1120 device is a fully integrated single-chip radio transceiver designed for high performance at very low-power and low-voltage operation in cost-effective wireless systems. all filters are integrated, thus removing the need for costly external saw and if filters. the device is mainly intended for the ism (industrial, scientific, and medical) and srd (short range device) frequency bands at 164 ? 192 mhz, 274 ? 320 mhz, 410 ? 480 mhz, and 820 ? 960 mhz. the CC1120 device provides extensive hardware support for packet handling, data buffering, burst transmissions, clear channel assessment, link quality indication, and wake-on-radio. the main operating parameters of the CC1120 device can be controlled through an spi interface. in a typical system, the CC1120 device will be used together with a microcontroller and only a few external passive components. figure 1-1 shows pin names and locations for the CC1120 device. 1 an important notice at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. production data. productfolder sample &buy technical documents tools & software support &community
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com figure 1-1. package 5-mm 5-mm qfn table 1-1. device information (1) device name package body size CC1120 vqfn (32) 5.00 mm x 5.00 mm (1) for all available packages, see the orderable addendum at the end of the datasheet. 2 device overview copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120 csn so (gpio1) dvdd avdd_if rbias avdd_rf gpio0 reset_n gpio3gpio2 dvdd vdd_guard CC1120 5 4 3 2 1 lna_p lna_n dcpl_vco avdd_synth1 trx_sw 19 20 21 22 23 avdd_pfd_chp xosc_q2xosc_q1 dcpl_pfd_chp 27 28 29 30 31 dcpl 6 7 pa 18 17 26 25 15 9 10 11 12 13 14 si n.c. dcpl_xosc avdd_xosc 8 sclk 16 24 ext_xosc 32 lpf0 lpf1 avdd_synth2 gnd ground pad
CC1120 www.ti.com swrs112f ? june 2011 ? revised april 2014 1.4 functional block diagram figure 1-2 shows the system block diagram of the CC1120 devices. figure 1-2. functional block diagram 1.5 regulations suitable for systems targeting compliance with: ? europe: etsi en 300 220, etsi en 54-25 ? us: fcc cfr47 part 15, fcc cfr47 part 90, 24, and 101 ? japan: arib rcr std-t30, arib std-t67, arib std-t108 1.6 peripherals and support functions ? enhanced wake-on-radio (ewor) functionality for automatic low-power receive polling ? includes functions for antenna diversity support ? support for retransmissions ? support for auto-acknowledge of received packets ? tcxo support and control, also in power modes ? automatic clear channel assessment (cca) for listen-before-talk (lbt) systems ? built-in coding gain support for increased range and robustness ? digital rssi measurement ? temperature sensor copyright ? 2011 ? 2014, texas instruments incorporated device overview 3 submit documentation feedback product folder links: CC1120 cc112x marc main radio control unit ultra low power 16 bit mcu 256 byte fifo ram buffer 4k byte rom rf and dsp frontend packet handler and fifo control configuration and status registers ewor enhanced ultra low power wake on radio timer spi serial configuration and data interface interrupt and io handler system bus pa lna_p lna_n 90db dynamic range adc 90db dynamic range adc high linearity lna 14dbm high efficiency pa channel filter xosc cordic agc automatic gain control, 60db vga range rssi measurements and carrier sense detection highly flexible fsk / ook demodulator (optional bit clock) (optional low jitter serial data output for legacy protocols) data interface with signal chain access xosc_q1 xosc_q2 ultra low power 32khz auto-calibrated rc oscillator (optional 32khz clock intput) csn (chip select) si (serial input) so (serial output) sclk (serial clock) (optional gpio0-3) modulator fully integrated fractional-n frequency synthesizer output power ramping and ook / ask modulation ifamp ifamp (optional autodetected external xosc / tcxo) (optional gpio for antenna diversity) i q battery sensor / temp sensor power on reset
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com table of contents 1 device overview ......................................... 1 4.14 32-mhz crystal oscillator ........................... 17 1.1 features .............................................. 1 4.15 32-mhz clock input (tcxo) ....................... 17 1.2 applications ........................................... 1 4.16 32-khz clock input .................................. 17 1.3 description ............................................ 1 4.17 32-khz rc oscillator ............................... 18 1.4 functional block diagram ............................ 3 4.18 i/o and reset ....................................... 18 1.5 regulations ........................................... 3 4.19 temperature sensor ................................ 18 1.6 peripherals and support functions .................. 3 4.20 typical characteristics .............................. 19 2 revision history ......................................... 5 5 detailed description ................................... 22 3 terminal configuration and functions .............. 6 5.1 block diagram ....................................... 22 3.1 pin configuration ..................................... 6 5.2 frequency synthesizer .............................. 22 4 specifications ............................................ 7 5.3 receiver ............................................. 23 4.1 electrical specifications .............................. 7 5.4 transmitter .......................................... 23 4.2 absolute maximum ratings .......................... 7 5.5 radio control and user interface ................... 23 4.3 handling ratings ..................................... 7 5.6 sniff mode ........................................... 24 4.4 general characteristics .............................. 7 5.7 antenna diversity ................................... 24 4.5 rf characteristics .................................... 7 5.8 wavematch .......................................... 25 4.6 regulatory standards ................................ 8 6 typical application circuit ........................... 26 4.7 current consumption, static modes ................. 8 7 device and documentation support ............... 27 4.8 current consumption, transmit modes .............. 9 7.1 device support ...................................... 27 4.9 current consumption, receive modes .............. 10 7.2 documentation support ............................. 27 4.10 receive parameters ................................. 10 7.3 community resources .............................. 28 4.11 transmit parameters ................................ 15 7.4 trademarks .......................................... 28 4.12 pll parameters ..................................... 16 7.5 electrostatic discharge caution ..................... 28 4.13 wake-up and timing ................................ 17 7.6 glossary ............................................. 28 4 table of contents copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120
CC1120 www.ti.com swrs112f ? june 2011 ? revised april 2014 2 revision history note: page numbers for previous revisions may differ from page numbers in the current version. this data manual revision history highlights the changes made to the swrs112e device-specific data manual to make it an swrs112f revision. see additions/modifications/deletions global ? turned on navigation icons on top of first page. ? rearranged top-level sections to align with the superior datasheet standards. section 1 ? updated/changed section title from "introduction" to " device overview " device overview ? updated/changed section 1.4 title from "block diagram" to " functional block diagram" section 1.1 , features: ? updated/changed bullet from "power down: 0.3 a..." to "power down: 0.12 a..." section 1.3 , description: ? added new device information table, table 1-1 . section 3 terminal configuration updated/changed section title from "device pins" to " terminal configuration and functions " and functions section 4 updated/changed section title from "device characteristics" to " specifications " specifications section 4.3 , handling ratings: ? split handling, ratings, and certifications from the abs max table and placed in new handling ratings table. section 4.7 , current consumption, static modes: ? updated/changed power down with retention typ from "0.3" to " 0.12 ' section 4.5 , rf characteristics: ? updated/changed frequency bands min from "274" to " (273.3) " ? added two new frequency bands with range of (205)-(240 ) mhz and (136.7)-(160) mhz section 4.14 , 32-mhz crystal oscillator: ? updated/changed crystal frequency condition from "note: it is recommended..." to " it is expected... " section 5 updated/changed section title from "device information" to " detailed description " detailed description section 5.6 , sniff mode: ? corrected link to swra428 in text. section 7 device and added new section including the corresponding subsections. documentation moved section 7.1.1.1 , configuration software to within section 7.1.1 , development support support copyright ? 2011 ? 2014, texas instruments incorporated revision history 5 submit documentation feedback product folder links: CC1120
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com 3 terminal configuration and functions 3.1 pin configuration the following table lists the pin-out configuration for the CC1120 device. pin no. pin name type / direction description 1 vdd_guard power 2.0 ? 3.6 v vdd 2 reset_n digital input asynchronous, active-low digital reset 3 gpio3 digital i/o general-purpose i/o 4 gpio2 digital i/o general-purpose i/o 5 dvdd power 2.0 ? 3.6 vdd to internal digital regulator digital regulator output to external decoupling 6 dcpl power capacitor 7 si digital input serial data in 8 sclk digital input serial data clock 9 so(gpio1) digital i/o serial data out (general-purpose i/o) 10 gpio0 digital i/o general-purpose i/o 11 csn digital input active-low chip select 12 dvdd power 2.0 ? 3.6 v vdd 13 avdd_if power 2.0 ? 3.6 v vdd 14 rbias analog external high-precision resistor 15 avdd_rf power 2.0 ? 3.6 v vdd 16 n.c. not connected 17 pa analog single-ended tx output (requires dc path to vdd) tx and rx switch. connected internally to gnd in 18 trx_sw analog tx and floating (high-impedance) in rx. 19 lna_p analog differential rx input (requires dc path to ground) 20 lna_n analog differential rx input (requires dc path to ground) 21 dcpl_vco power pin for external decoupling of vco supply regulator 22 avdd_synth1 power 2.0 ? 3.6 v vdd 23 lpf0 analog external loop filter components 24 lpf1 analog external loop filter components 25 avdd_pfd_chp power 2.0 ? 3.6 v vdd pin for external decoupling of pfd and chp 26 dcpl_pfd_chp power regulator 27 avdd_synth2 power 2.0 ? 3.6 v vdd 28 avdd_xosc power 2.0 ? 3.6 v vdd pin for external decoupling of xosc supply 29 dcpl_xosc power regulator crystal oscillator pin 1 (must be grounded if a 30 xosc_q1 analog tcxo or other external clock connected to ext_xosc is used) crystal oscillator pin 2 (must be left floating if a 31 xosc_q2 analog tcxo or other external clock connected to ext_xosc is used) pin for external clock input (must be grounded if a 32 ext_xosc digital input regular crystal connected to xosc_q1 and xosc_q2 is used) the ground pad must be connected to a solid ? gnd ground pad ground plane. 6 terminal configuration and functions copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120
CC1120 www.ti.com swrs112f ? june 2011 ? revised april 2014 4 specifications 4.1 electrical specifications all measurements performed on CC1120em_868_915 rev.1.0.1, CC1120em_955 rev.1.2.1, CC1120em_420_470 rev.1.0.1, or CC1120em_169 rev.1.2 4.2 absolute maximum ratings parameter min typ max unit condition supply voltage (vdd) (all supply pins ? 0.3 3.9 v must have the same voltage) input rf level +10 dbm vdd+0.3 voltage on any digital pin ? 0.3 v max 3.9 voltage on analog pins ? 0.3 2.0 v (including dcpl pins) 4.3 handling ratings min max unit storage temperature (default) -40 125 c range, t stg human body model (hbm) (1) -2 2 kv esd stress voltage, v esd charged device model (cdm) (2) -500 500 v (1) jedec document jep155 states that 500-v hbm allows safe manufacturing with a standard esd control process. (2) jedec document jep157 states that 250-v hbm allows safe manufacturing with a standard esd control process. 4.4 general characteristics parameter min typ max unit condition voltage supply range 2.0 3.6 v temperature range ? 40 85 c 4.5 rf characteristics parameter min typ max unit condition 820 960 mhz 410 480 mhz please see application note an115, using the (273.3) (320) mhz cc112x/cc1175 at 274 to frequency bands 320 mhz, for more information 164 192 mhz (205) (240) mhz please contact ti for more information about the use (136.7) (160) mhz of these frequency bands. 30 hz in 820 ? 950 mhz band frequency resolution 15 hz in 410 ? 480 mhz band 6 hz in 164 ? 192 mhz band 0 200 kbps packet mode data rate 0 100 kbps transparent mode data rate step size 1e-4 bps copyright ? 2011 ? 2014, texas instruments incorporated specifications 7 submit documentation feedback product folder links: CC1120
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com 4.6 regulatory standards performance mode frequency band suitable for compliance with comments arib t-96 performance also suitable arib t-108 for systems targeting etsi en 300 220 category 2 maximum allowed output etsi en 54-25 power in the respective fcc part 101 bands, using a range 820 ? 960 mhz fcc part 24 submask d extender such as the fcc part 15.247 cc1190 device fcc part 15.249 fcc part 90 mask g fcc part 90 mask j arib t-67 performance also suitable high-performance mode arib rcr std-30 for systems targeting etsi en 300 220 category 1 maximum allowed output 410 ? 480 mhz fcc part 90 mask d power in the respective fcc part 90 mask g bands, using a range extender etsi en 300 220 category 1 performance also suitable fcc part 90 mask d for systems targeting maximum allowed output 164 ? 192 mhz power in the respective bands, using a range extender etsi en 300 220 category 2 820 ? 960 mhz fcc part 15.247 fcc part 15.249 low-power mode 410 ? 480 mhz etsi en 300 220 category 2 164 ? 192 mhz etsi en 300 220 category 2 4.7 current consumption, static modes t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition 0.12 1 a power down with retention 0.5 a low-power rc oscillator running crystal oscillator / tcxo xoff mode 170 a disabled clock running, system waiting idle mode 1.3 ma with no radio activity 8 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120
CC1120 www.ti.com swrs112f ? june 2011 ? revised april 2014 4.8 current consumption, transmit modes 4.8.1 950-mhz band (high-performance mode) t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition tx current consumption +10 dbm 37 ma tx current consumption 0 dbm 26 ma 4.8.2 868-, 915-, and 920-mhz bands (high-performance mode) t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition tx current consumption +14 dbm 45 ma tx current consumption +10 dbm 34 ma 4.8.3 434-mhz band (high-performance mode) t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition tx current consumption +15 dbm 50 ma tx current consumption +14 dbm 45 ma tx current consumption +10 dbm 34 ma 4.8.4 169-mhz band (high-performance mode) t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition tx current consumption +15 dbm 54 ma tx current consumption +14 dbm 49 ma tx current consumption +10 dbm 41 ma 4.8.5 low-power mode t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition tx current consumption +10 dbm 32 ma copyright ? 2011 ? 2014, texas instruments incorporated specifications 9 submit documentation feedback product folder links: CC1120
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com 4.9 current consumption, receive modes 4.9.1 high-performance mode t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition rx wait for sync using rx sniff mode, where the receiver wakes up at regular 1.2 kbps, 4-byte preamble 2 ma intervals to look for an incoming 38.4 kbps, 4-byte preamble 13.4 ma packet rx peak current peak current consumption during 433-, 868-, 915-, 920-, and 950 ? mhz bands 22 ma packet reception at the sensitivity threshold 169-mhz band 23 ma average current consumption 50 kbps, 5-byte preamble, 40-khz check for data packet every 1 second using 15 a rc oscillator used as sleep timer wake on radio 4.9.2 low-power mode t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition rx peak current low-power rx mode peak current consumption during packet reception at the sensitivity 1.2 kbps 17 ma level 4.10 receive parameters all rx measurements made at the antenna connector, to a bit error rate (ber) limit of 1%. 4.10.1 general receive parameters (high-performance mode) t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition saturation +10 dbm digital channel filter programmable bandwidth 8 200 khz iip3, normal mode ? 14 dbm at maximum gain using 6 db gain reduction in front iip3, high linearity mode ? 8 dbm end with carrier sense detection 12 % enabled and assuming 4 byte preamble datarate offset tolerance with carrier sense detection 0.2 % disabled spurious emissions radiated emissions measured 1 ? 13 ghz (vco leakage at 3.5 ghz) ? 56 dbm according to etsi en 300 220, fc = 869.5 mhz 30 mhz to 1 ghz < ? 57 dbm optimum source impedance 868-, 915-, and 920-mhz bands 60 + j60 / 30+j30 ? (differential or single-ended rx configurations) 433-mhz band 100 + j60 / 50+ j30 ? 169-mhz band 140 + j40 / 70 + j20 ? 10 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120
CC1120 www.ti.com swrs112f ? june 2011 ? revised april 2014 4.10.2 rx performance in 950-mhz band (high-performance mode) t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition ? 120 dbm 1.2 kbps, dev=4 khz chf=10 khz (1) ? 114 dbm 1.2 kbps, dev=20 khz chf=50 khz (1) sensitivity 50 kbps 2gfsk, dev=25 khz, chf=100 note: sensitivity can be improved if the tx and ? 107 dbm khz (1) rx matching networks are separated. 200 kbps, dev=83 khz (outer symbols), ? 100 dbm chf=200 khz (1) , 4gfsk (2) 51 db 12.5 khz (adjacent channel) 52 db 25 khz (alternate channel) blocking and selectivity 1.2 kbps 2fsk, 12.5-khz channel separation, 73 db 1 mhz 4-khz deviation, 10-khz channel filter 76 db 2 mhz 81 db 10 mhz 47 db 50 khz (adjacent channel) 48 db + 100 khz (alternate channel) blocking and selectivity 1.2 kbps 2fsk, 50-khz channel separation, 69 db 1 mhz 20-khz deviation, 50-khz channel filter 71 db 2 mhz 78 db 10 mhz 43 db 200 khz (adjacent channel) blocking and selectivity 51 db 400 khz (alternate channel) 50 kbps 2gfsk, 200-khz channel separation, 25-khz deviation, 100-khz channel filter 62 db 1 mhz (same modulation format as 802.15.4g 65 db 2 mhz mandatory mode) 71 db 10 mhz 37 db 200 khz (adjacent channel) 44 db 400 khz (alternate channel) blocking and selectivity 200 kbps 4gfsk, 83-khz deviation (outer 55 db 1 mhz symbols), 200-khz channel filter, zero if 58 db 2 mhz 64 db 10 mhz (1) dev is short for deviation, chf is short for channel filter bandwidth (2) bt=0.5 is used in all gfsk measurements copyright ? 2011 ? 2014, texas instruments incorporated specifications 11 submit documentation feedback product folder links: CC1120
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com 4.10.3 rx performance in 868-, 915-, and 920-mhz bands (high-performance mode) t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition 300 bps with coding gain (using a pn ? 127 dbm spreading sequence with 4 chips per databit) dev=4 khz chf=10 khz (1) ? 123 dbm 1.2 kbps, dev=4 khz chf=10 khz (1) ? 120 dbm 1.2 kbps, dev=10 khz chf=42 khz (1) ? 117 dbm 1.2 kbps, dev=20 khz chf=50 khz (1) sensitivity ? 114 dbm 4.8 kbps ook ? 110 dbm 38.4 kbps, dev=20 khz chf=100 khz (1) 50 kbps 2gfsk, dev=25 khz, chf=100 ? 110 dbm khz (1) 200 kbps, dev=83 khz (outer symbols), ? 103 dbm chf=200 khz (1) , 4gfsk 54 db 12.5 khz (adjacent channel) 54 db 25 khz (alternate channel) blocking and selectivity 1.2-kbps 2-fsk, 12.5-khz channel separation, 75 db 1 mhz 4-khz deviation, 10-khz channel filter 79 db 2 mhz 87 db 10 mhz blocking 78 db 1 khz 1.2-kbps 2-fsk, 12.5-khz channel separation, 82 db 2 khz using settings optimized for blocking 88 db 8 mhz performance (3-khz deviation, 7.8-khz channel filter, 88 db 10 mhz minimum loop bandwidth) 48 db 50 khz (adjacent channel) 48 db + 100 khz (alternate channel) blocking and selectivity 1.2-kbps 2-fsk, 50-khz channel separation, 69 db 1 mhz 20-khz deviation, 50-khz channel filter 74 db 2 mhz 81 db 10 mhz 42 db + 100 khz (adjacent channel) blocking and selectivity 43 db 200 khz (alternate channel) 38.4-kbps 2-gfsk, 100-khz channel 62 db 1 mhz separation, 20-khz deviation, 100-khz channel 66 db 2 mhz filter 74 db 10 mhz 43 db 200 khz (adjacent channel) blocking and selectivity 50 db 400 khz (alternate channel) 50-kbps 2-gfsk, 200-khz channel separation, 25-khz deviation, 100-khz channel filter 61 db 1 mhz (same modulation format as 802.15.4g 65 db 2 mhz mandatory mode) 74 db 10 mhz 36 db 200 khz (adjacent channel) 44 db 400 khz (alternate channel) blocking and selectivity 200-kbps 4-gfsk, 83-khz deviation (outer 55 db 1 mhz symbols), 200-khz channel filter, zero if 59 db 2 mhz 67 db 10 mhz image rejection 1.2 kbps, dev=4 khz chf=10 khz (1) , image 54 db (image compensation enabled) at -125 khz (1) dev is short for deviation, chf is short for channel filter bandwidth 12 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120
CC1120 www.ti.com swrs112f ? june 2011 ? revised april 2014 4.10.4 rx performance in 434-mhz band (high-performance mode) t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition ? 123 dbm 1.2 kbps, dev=4 khz chf=10 khz (1) sensitivity ? 109 dbm 50 kbps 2gfsk, dev=25 khz, chf=100 khz ? 116 dbm 1.2 kbps, dev=20 khz chf=50 khz (1) 60 db 12.5 khz (adjacent channel) 60 db 25 khz (alternate channel) blocking and selectivity 1.2 kbps 2fsk, 12.5-khz channel separation, 79 db 1 mhz 4-khz deviation, 10-khz channel filter 82 db 2 mhz 91 db 10 mhz 54 db 50 khz (adjacent channel) 54 db + 100 khz (alternate channel) blocking and selectivity 1.2 kbps 2fsk, 50-khz channel separation, 74 db 1 mhz 20-khz deviation, 50-khz channel filter 78 db 2 mhz 86 db 10 mhz 47 db + 100 khz (adjacent channel) 50 db 200 khz (alternate channel) blocking and selectivity 38.4 kbps 2gfsk, 100-khz channel separation, 67 db 1 mhz 20-khz deviation, 100-khz channel filter 71 db 2 mhz 78 db 10 mhz (1) dev is short for deviation, chf is short for channel filter bandwidth 4.10.5 rx performance in 169-mhz band (high-performance mode) t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition ? 123 dbm 1.2 kbps, dev=4 khz chf=10 khz (1) sensitivity ? 117 dbm 1.2 kbps, dev=20 khz chf=50 khz (1) 64 db 12.5 khz (adjacent channel) 66 db 25 khz (alternate channel) blocking and selectivity 1.2 kbps 2fsk, 12.5-khz channel separation, 82 db 1 mhz 4-khz deviation, 10-khz channel filter 83 db 2 mhz 89 db 10 mhz 60 db 50 khz (adjacent channel) 60 db + 100 khz (alternate channel) blocking and selectivity 1.2 kbps 2fsk, 50-khz channel separation, 76 db 1 mhz 20-khz deviation, 50-khz channel filter 77 db 2 mhz 83 db 10 mhz spurious response rejection 1.2 kbps 2fsk, 12.5-khz channel separation, 70 db 4-khz deviation, 10-khz channel filter image rejection (image compensation 66 db 1.2 kbps, dev=4 khz chf=10 khz (1) , image enabled) at -125 khz (1) dev is short for deviation, chf is short for channel filter bandwidth copyright ? 2011 ? 2014, texas instruments incorporated specifications 13 submit documentation feedback product folder links: CC1120
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com 4.10.6 rx performance in low-power mode t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition ? 111 dbm 1.2 kbps, dev=4 khz chf=10 khz (1) ? 99 dbm 38.4 kbps, dev=50 khz chf=100 khz (1) sensitivity 50 kbps 2gfsk, dev=25 khz, chf=100 ? 99 dbm khz (1) 46 db 12.5 khz (adjacent channel) 46 db 25 khz (alternate channel) blocking and selectivity 1.2 kbps 2fsk, 12.5-khz channel separation, 73 db 1 mhz 4-khz deviation, 10-khz channel filter 78 db 2 mhz 79 db 10 mhz 43 db 50 khz (adjacent channel) 45 db + 100 khz (alternate channel) blocking and selectivity 1.2 kbps 2fsk, 50-khz channel separation, 71 db 1 mhz 20-khz deviation, 50-khz channel filter 74 db 2 mhz 75 db 10 mhz 37 db + 100 khz (adjacent channel) 43 db + 200 khz (alternate channel) blocking and selectivity 38.4 kbps 2gfsk, 100-khz channel separation, 58 db 1 mhz 20-khz deviation, 100-khz channel filter 62 db 2 mhz 64 db + 10 mhz 43 db + 200 khz (adjacent channel) blocking and selectivity 52 db + 400 khz (alternate channel) 50 kbps 2gfsk, 200-khz channel separation, 25-khz deviation, 100-khz channel filter 60 db 1 mhz (same modulation format as 802.15.4g 64 db 2 mhz mandatory mode) 65 db 10 mhz saturation +10 dbm (1) dev is short for deviation, chf is short for channel filter bandwidth 14 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120
CC1120 www.ti.com swrs112f ? june 2011 ? revised april 2014 4.11 transmit parameters t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition +12 dbm at 950 mhz +14 dbm at 915- and 920-mhz +15 dbm at 915- and 920-mhz with vdd = 3.6 v +15 dbm at 868 mhz max output power +16 dbm at 868 mhz with vdd = 3.6 v +15 dbm at 433 mhz +16 dbm at 433 mhz with vdd = 3.6 v +15 dbm at 169 mhz +16 dbm at 169 mhz with vdd = 3.6 v ? 11 dbm within fine step size range min output power ? 40 dbm within coarse step size range output power step size 0.4 db within fine step size range 4-gfsk 9.6 kbps in 12.5-khz channel, ? 75 dbc measured in 100-hz bandwidth at 434 mhz (fcc part 90 mask d compliant) 4-gfsk 9.6 kbps in 12.5-khz channel, adjacent channel power ? 58 dbc measured in 8.75-khz bandwidth (etsi en 300 220 compliant) 2-gfsk 2.4 kbps in 12.5-khz channel, 1.2- ? 61 dbc khz deviation spurious emissions < ? 60 dbm (not including harmonics) harmonics 2nd harm, 169 mhz ? 39 dbm 3rd harm, 169 mhz ? 58 dbm 2nd harm, 433 mhz ? 56 dbm transmission at +14 dbm (or maximum allowed in applicable band where this is less 3rd harm, 433 mhz ? 51 dbm than +14 dbm) using ti reference design 2nd harm, 450 mhz ? 60 dbm emissions measured according to arib t- 96 in 950-mhz band, etsi en 300-220 in 3rd harm, 450 mhz ? 45 dbm 170-, 433-, and 868-mhz bands and fcc 2nd harm, 868 mhz ? 40 dbm part 15.247 in 450- and 915-mhz band fourth harmonic in 915-mhz band will 3rd harm, 868 mhz ? 42 dbm require extra filtering to meet fcc 2nd harm, 915 mhz 56 dbuv/m requirements if transmitting for long intervals ( > 50-ms periods) 3rd harm, 915 mhz 52 dbuv/m 4th harm, 915 mhz 60 dbuv/m 2nd harm, 950 mhz ? 58 dbm 3rd harm, 950 mhz ? 42 dbm optimum load impedance 868-, 915-, and 920-mhz bands 35 + j35 ? 433 mhz band 55 + j25 ? 169 mhz band 80 + j0 ? copyright ? 2011 ? 2014, texas instruments incorporated specifications 15 submit documentation feedback product folder links: CC1120
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com 4.12 pll parameters 4.12.1 high-performance mode t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition ? 99 dbc/hz 10 khz offset phase noise in 950-mhz band ? 99 dbc/hz 100 khz offset ? 123 dbc/hz 1 mhz offset ? 99 dbc/hz 10 khz offset phase noise in 868-, 915-, 920-mhz bands ? 100 dbc/hz 100 khz offset ? 122 dbc/hz 1 mhz offset ? 106 dbc/hz 10 khz offset phase noise in 433-mhz band ? 107 dbc/hz 100 khz offset ? 127 dbc/hz 1 mhz offset ? 111 dbc/hz 10 khz offset phase noise in 169-mhz band ? 116 dbc/hz 100 khz offset ? 135 dbc/hz 1 mhz offset 4.12.2 low-power mode t a = 25 c, vdd = 3.0 v, fc = 869.5 mhz if nothing else stated parameter min typ max unit condition ? 90 dbc/hz 10 khz offset phase noise in 950-mhz band ? 92 dbc/hz 100 khz offset ? 124 dbc/hz 1 mhz offset ? 95 dbc/hz 10 khz offset phase noise in 868-, 915-, 920-mhz bands ? 95 dbc/hz 100 khz offset ? 124 dbc/hz 1 mhz offset ? 98 dbc/hz 10 khz offset phase noise in 433-mhz band ? 102 dbc/hz 100 khz offset ? 129 dbc/hz 1 mhz offset ? 106 dbc/hz 10 khz offset phase noise in 169-mhz band ? 110 dbc/hz 100 khz offset ? 136 dbc/hz 1 mhz offset 16 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120
CC1120 www.ti.com swrs112f ? june 2011 ? revised april 2014 4.13 wake-up and timing t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition powerdown to idle 0.4 ms depends on crystal 166 s calibration disabled idle to rx/tx 461 s calibration enabled rx/tx turnaround 50 s calibrate when leaving rx/tx 296 s enabled rx/tx to idle time calibrate when leaving rx/tx 0 s disabled frequency synthesizer calibration 391 s when using scal strobe required for rf front end gain minimum required number of preamble bytes 0.5 bytes settling only. digital demodulation does not require preamble for settling time from start rx until valid rssi 4.6 ms 12.5-khz channels including gain settling (function of channel bandwidth. programmable for trade-off between 0.3 ms 200-khz channels speed and accuracy) 4.14 32-mhz crystal oscillator t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition it is expected that there be will degraded sensitivity at multiples of xosc/2 in rx, and an increase in spurious emissions when the rf channel is close to multiples of xosc crystal frequency 32 33.6 mhz in tx. we recommend that the rf channel is kept rx_bw/2 away from xosc/2 in rx, and that the level of spurious emissions be evaluated if the rf channel is closer than 1 mhz to multiples of xosc in tx. load capacitance (c l ) 10 pf esr 60 ? simulated over operating conditions start-up time 0.4 ms depends on crystal 4.15 32-mhz clock input (tcxo) t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition clock frequency 32 33.6 mhz clock input amplitude (peak-to-peak) 0.8 vdd v simulated over operating conditions 4.16 32-khz clock input t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition clock frequency 32 khz 32 khz clock input pin input high voltage 0.8 vdd v 32 khz clock input pin input high voltage 0.2 vdd v copyright ? 2011 ? 2014, texas instruments incorporated specifications 17 submit documentation feedback product folder links: CC1120
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com 4.17 32-khz rc oscillator t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition frequency 32 khz after calibration relative to frequency reference frequency accuracy after calibration 0.1 % (32-mhz crystal or tcxo) initial calibration time 1.6 ms 4.18 i/o and reset t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition logic input high voltage 0.8 vdd v logic input low voltage 0.2 vdd v logic output high voltage 0.8 vdd v at 4-ma output load or less logic output low voltage 0.2 vdd v power-on reset threshold 1.3 v voltage on dvdd pin 4.19 temperature sensor t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition temperature sensor range ? 40 85 c change in sensor output voltage versus temperature coefficient 2.66 mv / c change in temperature typical sensor output voltage at t a = 25 c, typical output voltage 794 mv vdd = 3.0 v change in sensor output voltage versus vdd coefficient 1.17 mv / v change in vdd the CC1120 device can be configured to provide a voltage proportional to temperature on gpio1. the temperature can be estimated by measuring this voltage (see section 4.19 , temperature sensor ). for more information, see the CC1120 user guide ( swru295 ). 18 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120
CC1120 www.ti.com swrs112f ? june 2011 ? revised april 2014 4.20 typical characteristics t a = 25 c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated all measurements performed on CC1120em_868_915 rev.1.0.1, CC1120em_955 rev.1.2.1, CC1120em_420_470 rev.1.0.1, or CC1120em_169 rev.1.2 figure 4-12 was measured at the 50- ? antenna connector. figure 4-1. figure 4-2. figure 4-3. figure 4-4. figure 4-6. figure 4-5. copyright ? 2011 ? 2014, texas instruments incorporated specifications 19 submit documentation feedback product folder links: CC1120 sync word sensitivity vs sync word detect threshold 1.2kbps, 4khz deviation, 10khz ch. filter bw -130 -128 -126 -124 -122 -120 -118 -116 -114 3 5 7 9 11 13 15 17 sync word detect threshold sensitivity (dbm) sensitivity vs temperature 1.2kbps, 4khz deviation, 10khz ch. filter bw -125 -124 -123 -122 -121 -120 -40 0 40 80 temperature (oc) sensitivity (dbm) sensitivity vs voltage 1.2kbps, 4khz deviation, 10khz ch. filter bw -124 -123 -122 -121 -120 2 2.5 3 3.5 supply voltage (v) sensitivity (dbm) selectivity vs offset frequency (12.5khz channels) 1.2kbps, 4khz deviation, 10khz ch. filter bw -20 -10 0 10 20 30 40 50 60 70 169.9 169.95 170 170.05 170.1 frequency (mhz) selectivity (db) selectivity vs offset frequency (12.5khz channels) 1.2kbps, 4khz deviation, 10khz ch. filter bw -10 0 10 20 30 40 50 60 70 859.9 859.95 860 860.05 860.1 frequency (mhz) selectivity (db) rx current vs input level 1.2kbps, 4khz deviation, 10khz ch. filter bw 20.8 21.2 21.6 22 22.4 22.8 23.2 -130 -80 -30 20 input level (dbm) rx current (ma)
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com typical characteristics (continued) figure 4-7. figure 4-8. figure 4-9. figure 4-10. figure 4-11. figure 4-12. 20 specifications copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120 tx current at 868mhz vs pa power setting 0 10 20 30 40 50 60 7f 7b 77 73 6f 6b 67 63 5f 5b 57 53 4f 4b 47 43 pa power setting tx current (ma) output power at 868mhz vs pa power setting -50 -40 -30 -20 -10 0 10 20 7f 7b 77 73 6f 6b 67 63 5f 5b 57 53 4f 4b 47 43 pa power setting output power (dbm) output power vs voltage max setting, 170 mhz 6 8 10 12 14 16 18 2 2.5 3 3.5 supply voltage (v) output power (dbm) output power vs temperature max setting, 170 mhz, 3.6v 15 15.5 16 16.5 17 -40 0 40 80 temperature (oc) output power (dbm) rssi vs input level 1.2kbps, 4khz deviation, 10khz ch. filter bw -40 -20 0 20 40 60 80 100 -150 -100 -50 0 input level (dbm) rssi
CC1120 www.ti.com swrs112f ? june 2011 ? revised april 2014 typical characteristics (continued) figure 4-14. figure 4-13. figure 4-15. figure 4-16. figure 4-18. figure 4-17. copyright ? 2011 ? 2014, texas instruments incorporated specifications 21 submit documentation feedback product folder links: CC1120 gpio output high voltage vs current being sourced 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 0 5 10 15 20 25 30 35 current (ma) gpio output high voltage (v) gpio output low voltage vs current being sinked 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 35 current (ma) gpio output low voltage (mv)
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com 5 detailed description 5.1 block diagram figure 5-1 shows the system block diagram of the CC1120 devices. figure 5-1. system block diagram 5.2 frequency synthesizer at the center of the CC1120 device there is a fully integrated, fractional-n, ultra-high-performance frequency synthesizer. the frequency synthesizer is designed for excellent phase noise performance, providing very high selectivity and blocking performance. the system is designed to comply with the most stringent regulatory spectral masks at maximum transmit power. either a crystal can be connected to xosc_q1 and xosc_q2, or a tcxo can be connected to the ext_xosc input. the oscillator generates the reference frequency for the synthesizer, as well as clocks for the analog-to-digital (adc) and the digital part. to reduce system cost, CC1120 device has high- accuracy frequency estimation and compensation registers to measure and compensate for crystal inaccuracies. this compensation enables the use of lower cost crystals. if a tcxo is used, the CC1120 device automatically turns on and off the tcxo when needed to support low-power modes and wake-on- radio operation. 22 detailed description copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120 cc112x marc main radio control unit ultra low power 16 bit mcu 256 byte fifo ram buffer 4k byte rom rf and dsp frontend packet handler and fifo control configuration and status registers ewor enhanced ultra low power wake on radio timer spi serial configuration and data interface interrupt and io handler system bus pa lna_p lna_n 90db dynamic range adc 90db dynamic range adc high linearity lna 14dbm high efficiency pa channel filter xosc cordic agc automatic gain control, 60db vga range rssi measurements and carrier sense detection highly flexible fsk / ook demodulator (optional bit clock) (optional low jitter serial data output for legacy protocols) data interface with signal chain access xosc_q1 xosc_q2 ultra low power 32khz auto-calibrated rc oscillator (optional 32khz clock intput) csn (chip select) si (serial input) so (serial output) sclk (serial clock) (optional gpio0-3) modulator fully integrated fractional-n frequency synthesizer output power ramping and ook / ask modulation ifamp ifamp (optional autodetected external xosc / tcxo) (optional gpio for antenna diversity) i q battery sensor / temp sensor power on reset
CC1120 www.ti.com swrs112f ? june 2011 ? revised april 2014 5.3 receiver the CC1120 device features a highly flexible receiver. the received rf signal is amplified by the low- noise amplifier (lna) and is down-converted in quadrature (i/q) to the intermediate frequency (if). at if, the i/q signals are digitized by the high dynamic-range adcs. an advanced automatic gain control (agc) unit adjusts the front-end gain, and enables the CC1120 device to receive strong and weak signals, even in the presence of strong interferers. high-attenuation channels and data filtering enable reception with strong neighbor channel interferers. the i/q signal is converted to a phase and magnitude signal to support the fsk and ook modulation schemes. note a novel i/q compensation algorithm removes any problem of i/q mismatch, thus avoiding time-consuming and costly i/q image calibration steps. 5.4 transmitter the CC1120 transmitter is based on direct synthesis of the rf frequency (in-loop modulation). to use the spectrum effectively, the CC1120 device has extensive data filtering and shaping in tx mode to support high throughput data communication in narrowband channels. the modulator also controls power ramping to remove issues such as spectral splattering when driving external high-power rf amplifiers. 5.5 radio control and user interface the CC1120 digital control system is built around the main radio control (marc), which is implemented using an internal high-performance, 16-bit ultra-low-power processor. marc handles power modes, radio sequencing, and protocol timing. a 4-wire spi serial interface is used for configuration and data buffer access. the digital baseband includes support for channel configuration, packet handling, and data buffering. the host mcu can stay in power-down mode until a valid rf packet is received. this greatly reduces power consumption. when the host mcu receives a valid rf packet, it burst-reads the data. this reduces the required computing power. the CC1120 radio control and user interface are based on the widely used cc1101 transceiver. this relationship enables an easy transition between the two platforms. the command strobes and the main radio states are the same for the two platforms. for legacy formats, the CC1120 device also supports two serial modes. ? synchronous serial mode: the CC1120 device performs bit synchronization and provides the mcu with a bit clock with associated data. ? transparent mode: the CC1120 device outputs the digital baseband signal using a digital interpolation filter to eliminate jitter introduced by digital filtering and demodulation. enhanced wake-on-radio (ewor) ewor, using a flexible integrated sleep timer, enables automatic receiver polling with no intervention from the mcu. when the CC1120 device enters rx mode, it listens and then returns to sleep if a valid rf packet is not received. the sleep interval and duty cycle can be configured to make a trade-off between network latency and power consumption. incoming messages are time-stamped to simplify timer re- synchronization. the ewor timer runs off an ultra-low-power 32-khz rc oscillator. to improve timing accuracy, the rc oscillator can be automatically calibrated to the rf crystal in configurable intervals. copyright ? 2011 ? 2014, texas instruments incorporated detailed description 23 submit documentation feedback product folder links: CC1120
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com 5.6 sniff mode the CC1120 device supports quick start up times, and requires few preamble bits. sniff mode uses these conditions to dramatically reduce the current consumption while the receiver is waiting for data. because the CC1120 device can wake up and settle much faster than the duration of most preambles, it is not required to be in rx mode continuously while waiting for a packet to arrive. instead, the enhanced wake-on-radio feature can be used to put the device into sleep mode periodically. by setting an appropriate sleep time, the CC1120 device can wake up and receive the packet when it arrives with no performance loss. this sequence removes the need for accurate timing synchronization between transmitter and receiver, and lets the user trade off current consumption between the transmitter and receiver. for more information, see the sniff mode design note ( swra428 ). 5.7 antenna diversity antenna diversity can increase performance in a multipath environment. an external antenna switch is required. the cc1201 device uses one of the gpio pins to automatically control the switch. this device also supports differential output control signals typically used in rf switches. if antenna diversity is enabled, the gpio alternates between high and low states until a valid rf input signal is detected. an optional acknowledge packet can be transmitted without changing the state of the gpio. an incoming rf signal can be validated by received signal strength or by using the automatic preamble detector. using the automatic preamble detector ensures a more robust system and avoids the need to set a defined signal strength threshold (such a threshold sets the sensitivity limit of the system). 24 detailed description copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120
CC1120 www.ti.com swrs112f ? june 2011 ? revised april 2014 5.8 wavematch advanced capture logic locks onto the synchronization word and does not require preamble settling bytes. therefore, receiver settling time is reduced to the settling time of the agc, typically 4 bits. the wavematch feature also greatly reduces false sync triggering on noise, further reducing the power consumption and improving sensitivity and reliability. the same logic can also be used as a high- performance preamble detector to reliably detect a valid preamble in the channel. see swrc046 for more information. figure 5-2. receiver configurator in smartrf studio copyright ? 2011 ? 2014, texas instruments incorporated detailed description 25 submit documentation feedback product folder links: CC1120
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com 6 typical application circuit note this section is intended only as an introduction. very few external components are required for the operation of the CC1120 device. figure 6-1 shows a typical application circuit. the board layout will greatly influence the rf performance of the CC1120 device. figure 6-1 does not show decoupling capacitors for power pins. figure 6-1. typical application circuit for more information, see the reference designs available for the CC1120 device: ? cc112x ipc 868- and 915-mhz 2-layer reference design ( swrr106 ) ? cc112x ipc 868- and 915-mhz 4-layer reference design ( swrr107 ) ? CC1120em 169-mhz reference design ( swrc220 ) ? CC1120em 420- to 470-mhz reference design ( swrc221 ) ? CC1120em 868- to 915-mhz reference design ( swrc222 ) ? CC1120em 955-mhz reference design ( swrc223 ). 26 typical application circuit copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120 (optional control pin from CC1120) avdd_pfd_chp xosc_q2xosc_q1 dcpl_pfd_chp avdd_synth2 dcpl_xosc avdd_xosc ext_xosc reset_ngpio3 gpio2 dvdd vdd_guarddcpl si sclk csn so (gpio1) dvdd rbias avdd_if avdd_rf n.c. gpio0 lna_p lna_n dcpl_vco avdd_synth1 pa trx_sw lpf0 lpf1 vdd vdd vdd vdd vdd CC1120 5 4 3 2 16 7 8 13 12 11 10 9 1415 16 20 21 22 23 2419 18 17 28 29 30 31 32 2726 25 vdd vdd 32 mhz crystal optional xosc/ tcxo mcu connectionspi interface and optional gpio pins vdd vdd vdd
CC1120 www.ti.com swrs112f ? june 2011 ? revised april 2014 7 device and documentation support 7.1 device support 7.1.1 development support 7.1.1.1 configuration software the CC1120 device can be configured using the smartrf ? studio software ( swrc046 ). the smartrf studio software is highly recommended for obtaining optimum register settings, and for evaluating performance and functionality. 7.1.2 device and development-support tool nomenclature to designate the stages in the product development cycle, ti assigns prefixes to the part numbers of all microprocessors (mpus) and support tools. each device has one of three prefixes: x, p, or null (no prefix) (for example, CC1120). texas instruments recommends two of three possible prefix designators for its support tools: tmdx and tmds. these prefixes represent evolutionary stages of product development from engineering prototypes (tmdx) through fully qualified production devices and tools (tmds). device development evolutionary flow: x experimental device that is not necessarily representative of the final device's electrical specifications and may not use production assembly flow. p prototype device that is not necessarily the final silicon die and may not necessarily meet final electrical specifications. null production version of the silicon die that is fully qualified. support tool development evolutionary flow: tmdx development-support product that has not yet completed texas instruments internal qualification testing. tmds fully qualified development-support product. x and p devices and tmdx development-support tools are shipped against the following disclaimer: "developmental product is intended for internal evaluation purposes." production devices and tmds development-support tools have been characterized fully, and the quality and reliability of the device have been demonstrated fully. ti's standard warranty applies. predictions show that prototype devices (x or p) have a greater failure rate than the standard production devices. texas instruments recommends that these devices not be used in any production system because their expected end-use failure rate still is undefined. only qualified production devices are to be used. ti device nomenclature also includes a suffix with the device family name. this suffix indicates the package type (for example, CC1120), the temperature range (for example, blank is the default commercial temperature range), and the device speed range, in megahertz. provides a legend for reading the complete device name for any CC1120 device. for orderable part numbers of CC1120 devices in the qfn package types, see the package option addendum of this document, the ti website (www.ti.com), or contact your ti sales representative. 7.2 documentation support the following documents describe the CC1120 processor. copies of these documents are available on the internet at www.ti.com . tip: enter the literature number in the search box provided at www.ti.com. copyright ? 2011 ? 2014, texas instruments incorporated device and documentation support 27 submit documentation feedback product folder links: CC1120
CC1120 swrs112f ? june 2011 ? revised april 2014 www.ti.com 7.3 community resources the following links connect to ti community resources. linked contents are provided "as is" by the respective contributors. they do not constitute ti specifications and do not necessarily reflect ti's views; see ti's terms of use . ti e2e ? online community ti's engineer-to-engineer (e2e) community. created to foster collaboration among engineers. at e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. ti embedded processors wiki texas instruments embedded processors wiki. established to help developers get started with embedded processors from texas instruments and to foster innovation and growth of general knowledge about the hardware and software surrounding these devices. 7.4 trademarks smartrf, e2e are trademarks of texas instruments. 7.5 electrostatic discharge caution this integrated circuit can be damaged by esd. texas instruments recommends that all integrated circuits be handled with appropriate precautions. failure to observe proper handling and installation procedures can cause damage. esd damage can range from subtle performance degradation to complete device failure. precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 7.6 glossary slyz022 ? ti glossary . this glossary lists and explains terms, acronyms and definitions. 28 device and documentation support copyright ? 2011 ? 2014, texas instruments incorporated submit documentation feedback product folder links: CC1120
package option addendum www.ti.com 7-apr-2014 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish (6) msl peak temp (3) op temp (c) device marking (4/5) samples CC1120rhbr active vqfn rhb 32 3000 green (rohs & no sb/br) cu nipdauag level-3-260c-168 hr -40 to 85 CC1120 CC1120rhbt active vqfn rhb 32 250 green (rohs & no sb/br) cu nipdauag level-3-260c-168 hr -40 to 85 CC1120 CC1120rhmr nrnd vqfn rhm 32 3000 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 CC1120 CC1120rhmt nrnd vqfn rhm 32 250 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 CC1120 (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. - the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device. (6) lead/ball finish - orderable devices may have multiple material finish options. finish options are separated by a vertical ruled line. lead/ball finish values may wrap to two lines if the finish value exceeds the maximum column width.
package option addendum www.ti.com 7-apr-2014 addendum-page 2 important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant CC1120rhbr vqfn rhb 32 3000 330.0 12.4 5.3 5.3 1.5 8.0 12.0 q2 CC1120rhbt vqfn rhb 32 250 180.0 12.4 5.3 5.3 1.5 8.0 12.0 q2 CC1120rhmt vqfn rhm 32 250 180.0 12.4 5.3 5.3 1.5 8.0 12.0 q2 package materials information www.ti.com 7-apr-2014 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) CC1120rhbr vqfn rhb 32 3000 338.1 338.1 20.6 CC1120rhbt vqfn rhb 32 250 210.0 185.0 35.0 CC1120rhmt vqfn rhm 32 250 210.0 185.0 35.0 package materials information www.ti.com 7-apr-2014 pack materials-page 2

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